‘Backgating’ model including self-heating for low-frequency dispersive effects in III-V FETs
نویسندگان
چکیده
منابع مشابه
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs
AbstractLarge-signal measurement systems based on high-frequency sinusoidal excitations have been widely exploited by the microwave community for the characterization of transistors under nonlinear operation. However, device characterization at high-frequencies necessarily involves the application of rather complex calibration procedures of the measurement setup. In addition, reactive effects a...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 1998
ISSN: 0013-5194
DOI: 10.1049/el:19981351